gu-e photomos (aqv210e, aqv21 ? eh) types *indicate the peak ac and dc values. note: for space reasons, the smd terminal shape indicator ? and the package type indicator ? and ? are omitted from the seal. rating general use and economy type. dip (1 form a) 6-pin type. reinforced insulation 5,000v type. gu-e photomos (aqv210e, a qv21 ? eh) type i/o isolation output rating* part no. pac king quantity through hole terminal surface-mount terminal load voltage load current tube packing style tape and reel packing style tube tape and reel picked from the 1/2/3-pin side picked from the 4/5/6-pin side ac/dc standard 1,500 v ac 350 v 130 ma aqv210e AQV210EA AQV210EAx AQV210EAz 1 tube contains 50 pcs. 1 batch contains 500 pcs. 1,000 pcs. 400 v 120 ma aqv214e aqv214ea aqv214eax aqv214eaz reinforced 5,000 v 350 v 130 ma aqv210eh aqv210eha aqv210ehax aqv210ehaz 400 v 120 ma aqv214eh aqv214eha aqv214ehax aqv214ehaz testing vde (reinforced type)(standard type) mm inch 8.8 .346 6.4 .252 3.9 .154 8.8 .346 6.4 .252 3.6 .142 1 2 3 6 5 4 features 1. controls low-level analog signals photomos relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion. 2. control with low-level input signals 3. controls various types of loads such as relays, motors, lamps and solenoids. 4. optical coupling for extremely high isolation unlike mechanical relays, the photomos relay combines led and optoelectronic device to transfer signals using light for extremely high isolation. 5. eliminates the need for a counter electromotive force protection diode in the drive circuits on the input side 6. stable on resistance 7. low-level off state leakage current 8. eliminates the need for a power supply to drive the power mosfet a power supply used to drive the power mosfet is unnecessary because of the b uilt-in optoelectronic device. this results in easy circuit design and small pc board area. 9. low thermal electromotive force (approx. 1 v) typical applications ?high-speed inspection machines ?telephone equipment ?data communication equipment ?computer 1. absolute maximum ratings (ambient temperature: 25 c 77 f ) item sym- bol t ype of connec- tion aqv210e(a) aqv214e(a) aqv210eh(a) aqv214eh(a) remarks input led forward current i f 50 ma led reverse voltage v r 5 v peak forward current i fp 1 a f = 100 hz, duty factor = 0.1% pow er dissipation p in 75 mw output load voltage (peak ac) v l 350 v 400 v 350 v 400 v continuous load current i l a 0.13 a 0.12 a 0.13 a 0.12 a a connection: peak ac, dc; b, c connection: dc b 0.15 a 0.13 a 0.15 a 0.13 a c 0.17 a 0.15 a 0.17 a 0.15 a peak load current i peak 0.4 a 0.3 a 0.4 a 0.3 a a connection: 100 ms (1 shot), v l =dc pow er dissipation p out 500 mw total power dissipation p t 550 mw i/o isolation voltage v iso 1,500 v ac 5,000 v ac temperature limits operating t opr ?0 c to +85 c ?0 f to +185 f non-condensing at low temp. storage t stg ?0 c to +100 c ?0 f to +212 f all rights rese r v ed c o p y r i gh t matsushita elect r ic w o r k s , ltd.
gu-e photomos (aqv210e, aqv21 eh) 2. electrical characteristics (ambient temperature: 25 c 77 f ) *turn on/turn off time ** recommendable led forward current standard type: 5 ma reinforced type: 5 to 10 ma reference data item symbol t ype of connec- tion aqv210e(a) aqv214e(a) aqv210eh(a) aqv214eh(a) condition input led operate current typical i fon ? 1.1 ma 1.6 ma i l = max. maximum 3 ma led turn off current minimum i foff ? 0.3 ma 0.4 ma i l = max. typical 1.0 ma 1.5 ma led dropout voltage typical v f ? 1.25 v (1.14 v at i f = 5 ma) i f = 50 ma maximum 1.5 v output on resistance typical r on a 23 30 23 30 i f = 5 ma i l = max. within 1 s on time maximum 35 50 35 50 typical r on b 11.5 22.5 11.5 22.5 i f = 5 ma i l = max. within 1 s on time maximum 17.5 25 17.5 25 typical r on c 6.0 11.3 6.0 11.3 i f = 5 ma i l = max. within 1 s on time maximum 8.8 12.5 8.8 12.5 output capacitance typical c out a 45 pf i f = 0 ma v b = 0 v f = 1 mhz off state leakage current maximum ? ? 1 a i f = 0 ma v l = max. tr ansfer characteristics switching speed tu r n on time* typical t on ? 0.5 ms 0.7 ms i f = 0 ma 5 ma** l l = max. maximum 2.0 ms tu rn off time* typical t off ? 0.05 ms i f = 0 ma 5 ma i l = max. maximum 1.0 ms i/o capacitance typical c iso ? 0.8 pf f = 1 mhz v b = 0 v maximum 1.5 pf initial i/o isolation resistance minimum r iso ? 1,000 m 500 v dc ton input output 10% 90% toff 1. load current vs. ambient temperature characteristics allowable ambient temperature: e40 c to +85 c e40 f to +185 f type of connection:a 2. on resistance vs. ambient temperature characteristics measured portion: between terminals 4 and 6; led current: 5 ma; load voltage: max. (dc); continuous load current: max. (dc) 3. turn on time vs. ambient temperature characteristics led current: 5 ma; load voltage: max. (dc); continuous load current: max. (dc) 0 40 60 80 100 140 120 0204060 e20 80 100e40 aqv210e (h) ambient temperature, c 20 aqv214e (h) load current, ma 85 0 10 20 30 40 e40 50 0 e20 20 40 60 80 aqv210e (h) aqv214e (h) 85 ambient temperature, c on resistance, 0 0.8 1.2 e40 2.0 0 e20 20 40 60 80 0.4 1.6 85 aqv210eh, aqv214eh aqv214e aqv210e ambient temperature, c turn on time, ms all rights rese r v ed ? c opyright matsushita elect r ic w o r k s , ltd.
gu-e photomos (aqv210e, aqv21 ? eh) 4. turn off time vs. ambient temperature characteristics led current: 5 ma; load voltage: max. (dc); continuous load current: max. (dc) 5. led operate current vs. ambient temperature characteristics load voltage: max. (dc); continuous load current: max. (dc) 6. led turn off current vs. ambient temperature characteristics load voltage: max. (dc); continuous load current: max. (dc) 0 0.1 0.2 0.3 0.4 ?0 0 ?0 20 40 60 80 aqv210e aqv214e aqv210eh, aqv214eh 85 ambient temperature, c turn off time, ms 0 1 2 3 4 ?0 5 0 ?0 20 40 60 8085 aqv210e,aqv214e aqv210eh, aqv214eh ambient temperature, c led operate current, ma 0 1 2 3 4 ?0 5 0 ?0 20 40 60 8085 aqv210e,aqv214e aqv210eh, aqv214eh ambient temperature, c led turn off current, ma 7. led dropout voltage vs. ambient temperature characteristics sample: all types led current: 5 to 50 ma 8. current vs. voltage characteristics of output at mos portion measured portion: between terminals 4 and 6; ambient temperature: 25 c 77 f 9. off state leakage current vs. load voltage characteristics measured portion: between terminals 4 and 6; ambient temperature: 25 c 77 f 0 1.0 1.1 1.2 1.3 ?0 0 ?0 20 40 60 80 1.4 50ma 30ma 20ma 10ma 5ma 1.5 85 ambient temperature, c led dropout voltage, v 531 ? ? ? ?40 ?0 ?0 140 80 20 40 60 100 120 ?0 ?0 ?00 ?20 ?? 24 aqv210e(h) aqv214e(h) voltage, v current, ma 0 60 100 10 ? ? 10 10 ? 10 ?2 aqv214e(h) 20 40 80 aqv210e(h) load voltage, v off state leakage current, a 10-(1). turn on time vs. led forward current characteristics measured portion: between terminals 4 and 6; load voltage: max. (dc); continuous load current: max. (dc); ambient temperature: 25 c 77 f 10-(2). turn on time vs. led forward current characteristics measured portion: between terminals 4 and 6; load voltage: max. (dc); continuous load current: max. (dc); ambient temperature: 25 c 77 f 11-(1). turn off time vs. led forward current characteristics measured portion: between terminals 4 and 6; load voltage: max. (dc); continuous load current: max. (dc); ambient temperature: 25 c 77 f 0 0.2 0.4 0.6 0.8 1.4 1.0 10 20 30 40 50 60 aqv214e aqv210e 1.2 led forward current, ma turn on time, ms 0 0.5 1.0 2.5 1.5 10 20 30 40 50 60 2.0 aqv210eh, aqv214eh led forward current, ma turn on time, ms 0 0.02 0.04 0.08 0.06 10 20 30 40 0.10 50 aqv210e aqv214e led forward current, ma turn off time, ms 11-(2). turn off time vs. led forward current characteristics measured portion: between terminals 4 and 6; load voltage: max. (dc); continuous load current: max. (dc); ambient temperature: 25 c 77 f 12. output capacitance vs. applied voltage characteristics measured portion: between terminals 4 and 6; frequency: 1 mhz; ambient temperature: 25 c 77 f 0 0.05 0.10 0.20 0.15 10 20 30 40 0.25 50 aqv210eh, aqv214eh led forward current, ma turn off time, ms 0 10 20 50 10 20 30 40 50 30 40 0 applied voltage, v output capacitance, pf all rights rese r v ed c o p y r i gh t matsushita elect r ic w o r k s , ltd.
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